GTRB267008FC |
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| Part Number | GTRB267008FC |
| Manufacturer | MACOM |
| Description | The GTRB267008FC is a 620-watt (P4dB) GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features high efficiency, and a thermally-... |
| Features |
high efficiency, and a thermally-enhanced package with earless flange.
Package Type: H-37248KC-6/2
Peak/Average Ratio, Gain (dB) Efficiency (%)
Single-carrier WCDMA Drive-up VDD = 48 V, IDQ(MAIN) = 1000 mA, VGS(PEAK) = -4.8 V, ƒ = 2690 MHz, 3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24
60
Efficiency
20
40
Gain
16
20
12
0
8
-20
PAR @ 0.01% CCDF
4
-40
0
-60
25 30 35 40 45 50 55
Average Output Power (dBm)
Features
• GaN on SiC HEMT technology • Typical pulsed CW performance, 2690 MHz, 48 V, combined outputs, 10 µs pulse width, 10% duty cycle - Output power at P4dB = 619 W ... |
| Datasheet |
 GTRB267008FC Data Sheet
PDF 1.82MB |
| Distributor | Stock | Price | Buy |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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ADOS |
Gastransmitter |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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