WGC20630V1A MACOM Thermally Enhanced GaN Amplifier

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WGC20630V1A

MACOM
WGC20630V1A
WGC20630V1A WGC20630V1A
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Part Number WGC20630V1A
Manufacturer MACOM
Description The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a...
Features
• GaN on SiC HEMT Technology
• Pulsed CW Performance: 1995 MHz, 48 V, 10 µs Pulse Width, 10% Duty Cycle, Combined Outputs
• Output Power @ P4dB = 630 W
• Efficiency @ P4dB = 74%
• RoHS* Compliant Applications
• Cellular Power Description The WGC20630 is a 630 W (P4dB) GaN on Silicon Carbide HEMT amplifier designed for use in multistandard cellular power amplifier applications. It features optimized operation from 1930 - 2020 MHz and a thermally-enhanced over-molded plastic package. Typical RF Performance1 (Tested in Doherty application test circuit) VDD = 48 V, IDQ = 360 mA, POUT = 49.3 dBm (...

Datasheet Datasheet WGC20630V1A Data Sheet
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