CG2H40025 RF Power GaN HEMT

CG2H40025 RF Power GaN HEMT

The CG2H40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capab.

Features

• Up to 6 GHz Operation
• 17 dB Small Signal Gain at 2.0 GHz
• 15 dB Small Signal Gain at 4.0 GHz
• 30 W typical PSAT
• 70% Efficiency at PSAT
• 28 V Operation Applications
• 2-Way Private Radio
• Broadband Amplifiers
• Cellular Infrastructure
• Test Instrumentation
• Class A, AB, Linear amplifiers suitable for OFDM, W-CDMA, EDGE, CDMA waveforms Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data s.