The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arseni.
• 8.4 - 9.6 GHz Operation
• 80 W POUT typical
• 10 dB Power Gain
• 55% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop
Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security
Large Signal Models Available for ADS and MWO
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Rev. 3.5, 2.
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