CGHV96050F2 Datasheet

CGHV96050F2 GaN HEMT

The CGHV96050F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arseni.

Features

• 8.4 - 9.6 GHz Operation
• 80 W POUT typical
• 10 dB Power Gain
• 55% Typical PAE
• 50 Ohm Internally Matched
• <0.1 dB Power Droop Applications
• Marine Radar
• Weather Monitoring
• Air Traffic Control
• Maritime Vessel Traffic Control
• Port Security Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Rev. 3.5, 2.