CMPA1C1D060D |
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Part Number | CMPA1C1D060D |
Manufacturer | MACOM |
Description | The CMPA1C1D060D is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC) on a Silicon Carbide substrate, using a 0.25 μm gate length fa... |
Features |
• 26 dB Small Signal Gain • 60 W Typical PSAT • Operation up to 40 V • High Breakdown Voltage • High Temperature Operation • Size 0.209 x 0.240 x 0.004 inches Applications • Satellite Communications Uplink • PTP Radio 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Rev. 1.0, 2022-8-30 https://www.macom.com/support CMPA1C1D060D Absolute Maximum Ratings (no... |
Document |
CMPA1C1D060D Data Sheet
PDF 381.99KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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CREE |
Power Amplifier |
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Wolfspeed |
Power Amplifier |
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Wolfspeed |
Power Amplifier |
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CREE |
Power Amplifier |
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MACOM |
1W GaN HPA |
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Wolfspeed |
1W GaN HPA |
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Wolfspeed |
GaN HEMT MMIC Power Amplifier |
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CREE |
GaN MMIC Power Amplifier |
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Wolfspeed |
GaN MMIC Power Amplifier |
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CREE |
GaN MMIC Power Amplifier |
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