CGH31240F GaN HEMT

CGH31240F GaN HEMT

The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal .

Features

• 2.7 - 3.1 GHz Operation
• 12 dB Power Gain
• 60% Power Added Efficiency
• < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Rev. 2.2, 2022-11-11 https://www.macom.com/support CGH31240F Absolute Maximum Ratings (not simultaneous) at 25ºC Case Temperature Parameter Pulse Width Du.