CGHV35120F |
|
Click to view a larger image
| Part Number | CGHV35120F |
| Manufacturer | MACOM |
| Description | The CGHV35120F is a gallium nitride (GaN) high electron mobility transistor (HEMT)designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35120F idea... |
| Features |
• Rated Power = 120 W @ TCASE = 85°C • Operating Frequency = 2.9 - 3.8 GHz • Transient 100 μsec - 300 μsec @ 20% Duty Cycle • 13 dB Power Gain @ TCASE = 85°C • 62% Typical Drain Efficiency @ TCASE = 85°C • Input Matched • <0.3 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: Rev. 1.0, 20... |
| Datasheet |
 CGHV35120F Data Sheet
PDF 532.15KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Part # | Manufacture | Description | Datasheet |
|---|---|---|---|---|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
MACOM |
500W GaN HPA |
|
|
|
|
Wolfspeed |
500W GaN HEMT |
|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
Cree |
GaN HEMT |
|
|
|
|
Wolfspeed |
GaN HEMT |
|