CMPA5259025F |
|
Part Number | CMPA5259025F |
Manufacturer | MACOM |
Description | The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide... |
Features |
• 30 dB small signal gain • • 50% efficiency at PSAT Operation up to 28 V • High breakdown voltage Applications • Radar Typical Performance Over 5.2 - 5.9 GHz (TC = 25 °C) of Demonstration Amplifier Parameter Small Signal Gain Output Power1 Efficiency1 5.2 GHz 33.6 38.5 53.5 5.5 GHz 31.9 39.6 51.3 5.9 GHz 32.2 34.8 47.2 Input Return Loss -13.5 -15.5 -4.8 Note: 1 100 μsec pulse width, 10% duty cycle, PIN = 22 dBm. Units dB W % dB 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein witho... |
Document |
CMPA5259025F Data Sheet
PDF 809.65KB |
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
|
|
CREE |
GaN MMIC |
|
|
|
Wolfspeed |
Power Amplifier |
|
|
|
CREE |
GaN MMIC |
|
|
|
Wolfspeed |
Power Amplifier |
|
|
|
CREE |
Power Amplifier |
|
|
|
Wolfspeed |
Power Amplifier |
|
|
|
Wolfspeed |
GaN HEMT MMIC Power Amplifier |
|
|
|
CREE |
GaN MMIC Power Amplifier |
|
|
|
Wolfspeed |
GaN MMIC Power Amplifier |
|
|
|
CREE |
GaN MMIC Power Amplifier |
|