CMPA5259025F MACOM GaN MMIC

logo


CMPA5259025F

MACOM
CMPA5259025F
CMPA5259025F CMPA5259025F
zoom Click to view a larger image
Part Number CMPA5259025F
Manufacturer MACOM
Description The CMPA5259025F is a gallium-nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC) designed specifically for high efficiency, high gain, and wide...
Features
• 30 dB small signal gain

• 50% efficiency at PSAT Operation up to 28 V
• High breakdown voltage Applications
• Radar Typical Performance Over 5.2 - 5.9 GHz (TC = 25 °C) of Demonstration Amplifier Parameter Small Signal Gain Output Power1 Efficiency1 5.2 GHz 33.6 38.5 53.5 5.5 GHz 31.9 39.6 51.3 5.9 GHz 32.2 34.8 47.2 Input Return Loss -13.5 -15.5 -4.8 Note: 1 100 μsec pulse width, 10% duty cycle, PIN = 22 dBm. Units dB W % dB 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein witho...

Document Datasheet CMPA5259025F Data Sheet
PDF 809.65KB


Distributor Stock Price Buy




Similar Datasheet

No. Part # Manufacture Description Datasheet
1
CMPA5259025F

CREE
GaN MMIC
Datasheet
2
CMPA5259025S

Wolfspeed
Power Amplifier
Datasheet
3
CMPA5259050F

CREE
GaN MMIC
Datasheet
4
CMPA5259050S

Wolfspeed
Power Amplifier
Datasheet
5
CMPA5585030F

CREE
Power Amplifier
Datasheet
6
CMPA5585030F

Wolfspeed
Power Amplifier
Datasheet
7
CMPA0060002D

Wolfspeed
GaN HEMT MMIC Power Amplifier
Datasheet
8
CMPA0060002F

CREE
GaN MMIC Power Amplifier
Datasheet
9
CMPA0060002F

Wolfspeed
GaN MMIC Power Amplifier
Datasheet
10
CMPA0060025F

CREE
GaN MMIC Power Amplifier
Datasheet
More datasheet from MACOM



Since 2014 :: D4U Semiconductor :: (Privacy Policy & Contact)