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1SS361CT |
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| Part Number | 1SS361CT |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Description | TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361CT Ultra High Speed Switching Application z Small package z Low forward voltage: VF (3) = 0.9 V (typ.) z Fast reverse recovery time: trr = 1.6 ns ... |
| Features |
cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/ voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Forward voltage
Reverse current Total capacitance Reverse recovery time
Symbol
VF (1) VF (2) VF (... |
| Document |
 1SS361CT Data Sheet
PDF 237.05KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
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Diodes |
DUAL SURFACE MOUNT SWITCHING DIODE |
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Toshiba Semiconductor |
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Toshiba Semiconductor |
Silicon Epitaxial Planar Type Diode |
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Toshiba |
Silicon Epitaxial Planar Type Diode |
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Toshiba Semiconductor |
Diode |
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