PTVA120251EA |
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Part Number | PTVA120251EA |
Manufacturer | MACOM |
Description | The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down fla... |
Features |
include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 mA, TCASE = 25°C
300 µs pulse width, 12% duty cycle
60
70
Efficiency
55
60
Output Power (dBm) Drain Efficiency (%)
50 45 40 35 30
18
50 Output Power
40
1200 MHz
1300 MHz 30
1400 MHz
1200 MHz 1300 Mhz
20
1400 MHz
a120251ea-v2-gr1a```
10
22
26
30
34
Input Power (dBm)
PTVA120251EA Package H-36265-2
Features
• Unmatched input and output • ... |
Document |
PTVA120251EA Data Sheet
PDF 836.28KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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Infineon |
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MACOM |
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Infineon |
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Infineon |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET |
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