PXAD184218FV 420W High Power RF LDMOS FET

PXAD184218FV 420W High Power RF LDMOS FET

The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design, input and output matching, high gain and thermally-enhanced package with ea.

Features

include dual-path design, input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with an advanded LDMOS process, this device provides excellent thermal performance and superior reliability. PXAD184218FV Package H-37275G-6/2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 28 V, IDQ(MAIN) = 720 mA, VGS(PEAK) = 1.4 V, ƒ = 1880 MHz, 3GPP WCDMA signal, PAR = 10 dB, 3.84 MHz BW 24 60 Efficiency 20 40 16 20 12 Gain 0 8 -20 4 0 25 PAR @ 0.01% CCDF -40 pxad184218fv_g1 -60 30 35 40 45 50 55 Average .