GTVA126001FC |
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| Part Number | GTVA126001FC |
| Manufacturer | MACOM |
| Description | The GTVA126001EC and GTVA126001FC are 600 W GaN on SiC high electron mobility transistors (HEMT) for use in the DC to 1400 MHz frequecy band. They feature input matching, high efficiency, and thermall... |
| Features |
• GaN on SiC HEMT technology • Input matched • Typical pulsed CW performance (class AB), 1200 MHz, 50 V, 300 μs pulse width, 10% duty cycle • Output power P3dB = 600 W • Drain efficiency = 65% • Gain = 18 dB • Capable of withstanding a 10:1 load mismatch (all phase angles) at 600 W peak power under pulse conditions: 300 μs pulse width, 10% duty cycle, VDD = 50 V, IDQ = 100 mA • Human body model class 1 C (per ANSI/ESDA/JEDEC JS-001) • Pb-free and RoHS compliant Package Types: H-36248-2 Package Types: H-37248-2 PN’s: GTVA126001EC PN’s: GTVA126001FC Power Sweep: Gain & Efficiency 50 V, IDQ =... |
| Datasheet |
 GTVA126001FC Data Sheet
PDF 430.25KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN HEMT |
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MACOM |
600W High Power RF GaN HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN HEMT |
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Wolfspeed |
Thermally-Enhanced High Power RF GaN |
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Wolfspeed |
High Power RF GaN |
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Wolfspeed |
High Power RF GaN |
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Wolfspeed |
High Power RF GaN |
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MACOM |
Thermally-Enhanced High Power RF GaN on SiC HEMT |
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Infineon |
Thermally-Enhanced High Power RF GaN HEMT |
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Infineon |
Thermally-Enhanced High Power RF GaN HEMT |
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