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WS1A2639 |
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| Part Number | WS1A2639 |
| Manufacturer | MACOM |
| Description | The WS1A2639 is an Asymmetric Doherty Power Amplifier Module (PAM) integrating the GaN on SiC technology with RF matching and biasing networks on a multilayer laminate substrate with advanced heat sin... |
| Features |
• GaN on SiC technology • Frequency: 2496-2690 MHz • Average Output Power : 6 to 8 W maximum • PSAT = 48 dBm • RF inputs matched to 50 Ω and DC matched • Gate bias supply for main and peak sides available from either side of device • Integrated harmonic terminations • Pb-free and RoHS compliant WS1A2639 Package PG-LGA-6x6-3-1 Typical Broadband Performance Single-carrier LTE Performance (tested in the applications circuit for 2500 – 2700 MHz) VDD = 48 V, IDQ(main) = 25 mA, VGS(peak) = –5 V, channel bandwidth = 5 MHz, input PAR = 10 dB @ 0.01% CCDF POUT Gain Efficiency ACPR – ACPR + PAR (... |
| Document |
 WS1A2639 Data Sheet
PDF 331.51KB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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Wolfspeed |
GaN on SiC Power Amplifier |
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BOURNS |
High Surge Withstand Wirewound Resistor |
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Wolfspeed |
GaN on SiC Power Amplifier |
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MACOM |
GaN on SiC Power Amplifier |
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WAYON |
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WAYON |
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WAYON |
Power Transient Voltage Suppressor |
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WAYON |
Power Transient Voltage Suppressor |
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