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CMPA2060035F1 |
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| Part Number | CMPA2060035F1 |
| Manufacturer | MACOM |
| Description | The CMPA2060035F1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium a... |
| Features |
Applications
• >30% typical power added • Civil and military pulsed radar efficiency amplifiers 1 • 30 dB small signal gain • Test instrumentation 4 • 36 W typical PSAT • Electronic warfare jamming 2 5 • Operation up to 28 V • High breakdown voltage 6 3 • High temperature operation Note: Features represent typical performance across multiple frequencies under 25 °C operation. Please reference the performance charts for additional details. Typical Performance Over 2.0 - 6.0 GHz (TC = 25 °C) Parameter Small Signal Gain1,2 Output Power1,3 Power Gain1,3 Power Added Efficiency1,... |
| Document |
 CMPA2060035F1 Data Sheet
PDF 1.81MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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MACOM |
GaN MMIC Power Amplifier |
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MACOM |
Power Amplifier |
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Wolfspeed |
Power Amplifier |
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MACOM |
GaN MMIC Power Amplifier |
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CREE |
GaN MMIC Power Amplifier |
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MACOM |
Power Amplifier |
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Wolfspeed |
GaN HEMT MMIC Power Amplifier |
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CREE |
GaN MMIC Power Amplifier |
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Wolfspeed |
GaN MMIC Power Amplifier |
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CREE |
GaN MMIC Power Amplifier |
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