CG2H30070F RF Power GaN HEMT

CG2H30070F RF Power GaN HEMT

The CG2H30070F is an internally matched gallium nitride (GaN) high electron mobility transistor (HEMT). The CG2H30070F, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandw.

Features

• 0.5 - 3.0 GHz application circuit
• 85 W POUT typical at 28 V
• 10 dB power gain
• 58% drain efficiency
• Internally matched Applications
• Broadband amplifiers
• Electronic counter measures
• Signal jamming
• Milcom
• Radar
• Data link Typical Performance Over 0.5 - 3.0 GHz (TC = 25 °C) Parameter Small Signal Gain (S21) 500 MHz 16.7 1000 MHz 1500 MHz 2000 MHz 2500 MHz 3000 MHz 15.3 17.3 15 16.3 14.8 Gain @ PIN = 39 dBm 10.3 10.4 10.6 9.8 11.4 10.5 Output Power @ PIN = 39 dBm 85 88 90 76 109 89 Efficiency @ PIN = 39 dBm 63 57.5 55.6 63.4 62.1 59.8 Notes: Opera.