CMPA901A035F1 Power Amplifier

CMPA901A035F1 Power Amplifier

The CMPA901A035F1 is a gallium nitride (GaN) monolithic microwave integrated circuit (MMIC) on a silicon carbide (SiC) substrate. The device provides 35 watts of output power across the band from 9 to 11 GHz. The GaN HEMT MMIC is fully matched to 50 Ohm, is housed in a compact, 6-lead metal/ceramic .

Features

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• 35 W typical PSAT >38% typical power added efficiency
• 35 dB large signal gain
• High temperature operation Note: Features are typical performance across frequency under 25 °C operation. Please reference performance charts for additional details. Applications
• Civil and military pulsed radar amplifiers Package Type: 440219 PN's: CMPA901A035F1 Typical Performance Over 9.0 - 10.0 GHz (TC = 25 °C) Parameter Small Signal Gain1,2 Output Power1,3 Power Gain1,3 Power Added Efficiency1,3 Notes: 1 VDD = 28 V, IDQ = 1500 mA. 2 Measured at PIN = -20 dBm. 3 Measured at PIN = 23 dBm and 300 .