NPTB00004B GaN Power Transistor

NPTB00004B GaN Power Transistor

The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standard surface mount plastic package. Ordering Information Part Number NPTB00004B NPTB00004B-SMB NPTB0000.

Features

• GaN on Si HEMT D-Mode Transistor
• Suitable for linear and saturated applications
• Tunable from DC - 6 GHz
• 28 V Operation
• 14.8 dB Gain @ 2.5 GHz
• 57 % Drain Efficiency @ 2.5 GHz
• 100 % RF Tested
• Industry standard SOIC plastic package
• RoHS* Compliant Applications
• Defense Communications
• Land Mobile Radio
• Avionics
• Wireless Infrastructure
• ISM
• VHF/UHF/L/S-Band Radar Description The NPTB00004B GaN HEMT is a power transistor optimized for DC - 6 GHz operation. This device supports CW, pulsed, and linear operation with output power levels to 5 W (37 dBm) in an industry standar.