TPD7106F 1-channel High-Side N channel Power MOSFET Gate Driver

TPD7106F 1-channel High-Side N channel Power MOSFET Gate Driver

TPD7106F is a 1channel high-side N channel power MOSFET gate driver. This IC contains a charge pump circuit, allowing easy configuration of a high-side switch for large-current applications. TPD7106F TPD7106F 2. Applications ● Junction Boxes for Automotive. ● Power distribution modules for Automo.

Features

● AEC-Q100 qualified.
● Built in the charge pump circuit (Charge pump capacitor is external).
● Output current is -10mA / +400mA, and the drive by parallel use of N channel power MOSFET is possible.
● Built in the protection for reverse connection of power supply.
● Built in the diagnosis output for under voltage of Charge pump circuit.
● SSOP16 package for surface mounting. Note: Due to its MOS structure. This product is sensitive to static electricity. © 2019 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2020-03 2020-01-16 4. Block Diagram TPD7106F .