TTA012 |
|
Part Number | TTA012 |
Manufacturer | Toshiba (https://www.toshiba.com/) |
Description | Bipolar Transistors Silicon PNP Epitaxial Type TTA012 TTA012 1. Applications • High-Speed Switching • DC-DC Converters 2. Features (1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A... |
Features |
(1) High DC current gain: hFE = 100 to 200 (VCE = -2 V, IC = -0.4 A) (2) Low collector-emitter saturation voltage: VCE(sat) = -0.22 V (max) (IC = -1.2 A, IB = -0.12 A) (3) High-speed switching: tf = 35 ns (typ.) (IC = -1.2 A)
3. Packaging and Internal Circuit
PW-Mini
1. Base 2. Collector (Heatsink) 3. Emitter
©2022-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2022-10
2023-01-18 Rev.2.0
TTA012
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
-80
V
C... |
Document |
TTA012 Data Sheet
PDF 298.82KB |
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