Document | DataSheet (219.19KB) |
Bipolar Transistors Silicon PNP Epitaxial Type TTA009 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A) 3. Packaging and Internal .
(1) Low collector saturation voltage : VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching : tstg = 300 ns (typ.) (IC = -1 A) 3. Packaging and Internal Circuit TTA009 New PW-Mold 1. Base 2. Collector (Heatsink) 3. Emitter Start of commercial production 2015-04 1 2015-06-19 Rev.1.0 TTA009 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Collector-base voltage VCBO -80 V Collector-emitter voltage VCEO -80 V Emitter-base voltage VEBO -7 Collector current (DC) (Note 1) IC -3 A Coll.
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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1 | TTA0001 |
INCHANGE |
PNP Transistor | |
2 | TTA0001 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
3 | TTA0002 |
INCHANGE |
PNP Transistor | |
4 | TTA0002 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
5 | TTA003 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
6 | TTA004 |
Toshiba |
Silicon PNP Epitaxial Type Transistor | |
7 | TTA004B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
8 | TTA005 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
9 | TTA006B |
Toshiba |
Silicon PNP Transistors | |
10 | TTA007 |
Toshiba Semiconductor |
Silicon PNP Transistor | |
11 | TTA008B |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
12 | TTA010 |
Toshiba |
Silicon PNP Triple-Diffused Type Bipolar Transistors | |
13 | TTA011 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
14 | TTA012 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors | |
15 | TTA013 |
Toshiba |
Silicon PNP Epitaxial Type Bipolar Transistors |