TTA003 Datasheet

TTA003 Silicon PNP Epitaxial Type Bipolar Transistors

Bipolar Transistors Silicon PNP Epitaxial Type TTA003 1. Applications • Power Amplifiers • Power Switching 2. Features (1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. .

Features

(1) Low collector saturation voltage: VCE(sat) = -0.5 V (max) (IC = -1 A, IB = -100 mA) (2) High-speed switching: tstg = 300 ns (typ.) 3. Packaging and Internal Circuit TTA003 1. Base 2. Collector (Heatsink) 3. Emitter New PW-Mold 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Junction temperature Storage temperature VCBO -80 V VCEO -80 VEBO -7 (Note 1) IC .