FDN028N20 Datasheet

FDN028N20 N-Channel MOSFET

This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. Features • Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A • Max rDS(on) = 4.

Features

• Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
• Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
• High Performance Trench Technology for Extremely Low rDS(on)
• High Power and Current Handling Capability in a Widely Used Surface Mount Package
• Fast Switching Speed
• 100% UIL Tested
• This Device is Pb−Free, Halide Free and is RoHS Compliant Applications
• Primary DC−DC Switch
• Load Switch MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage (Note 3) ±12 V ID Continuous TA = 25°C (No.