TTB1067B Silicon PNP Transistors

TTB1067B Silicon PNP Transistors

Bipolar Transistors Silicon PNP Epitaxial Type (Darlington Transistor) TTB1067B TTB1067B 1. Applications • Micromotor Drivers • Hammer Drivers • Switching • Power Amplifiers 2. Features (1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation vol.

Features

(1) High DC current gain : hFE = 2000 (min) (VCE = -2 V, IC = -1 A) (2) Low collector-emitter saturation voltage : VCE(sat) = -1.5 V (max) (IC = -1 A, IB = -1 mA) (3) Complementary to TTD1509B 3. Packaging and Internal Circuit (Note) 1. Emitter 2. Collector 3. Base TO-126N Note: Although this device is encapsulated in epoxy resin, it does not provide any guarantee to the maximum isolation voltage. Therefore, as with the case with non-isolated devices, care should be taken with regard to electrical isolation from surrounding parts. ©2016 Toshiba Corporation 1 Start of commercial produc.