HM50P03 P-Channel MOSFET

HM50P03 P-Channel MOSFET

The HM50P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -50A RDS(ON) < 17mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V ● High Power and current handing capability ● Lead free product is a.

Features

● VDS = -30V,ID = -50A RDS(ON) < 17mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package Application
●Battery Switch
●Load switch
●Power management D G S Schematic diagram HM50P03 Marking and pin assignment  TO-220-3L top view Package Marking And Ordering Information Device Marking Device Device Package HM50P03 HM50P03 TO-220-3L Reel Size Ø330mm Tape width 2500 units Quantity 12mm Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gat.