AOE66410 40V N-Channel AlphaSGT

AOE66410 40V N-Channel AlphaSGT

• Thermal enhanced XSFET package • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Optimized for common ground of Sencondary-side Synchrounous Rectifier • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 100A < .

Features

gy L=0.3mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 100 100 400 54 43 78 913 147 59 5.0 3.2 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s 20 Maximum Junction-to-Ambient A D Steady-State RqJA 45 Maximum Junction-to-Case Steady-State RqJC 0.7 Max 25 55 0.85 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev.1.1: July 2023 www.aosmd.com Page 1 of 6 AOE66410 Electrical Characteristics (TJ=25°C unless otherwise noted) .