F59L1G81MB 1 Gbit (128M x 8) 3.3V NAND Flash Memory

F59L1G81MB 1 Gbit (128M x 8) 3.3V NAND Flash Memory

The device is a 128Mx8bit with spare 4Mx8bit capacity. The device is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve val.

Features

 Voltage Supply: 3.3V (2.7V~3.6V)
 Organization - Memory Cell Array: (128M + 4M) x 8bit - Data Register: (2K + 64) x 8bit
 Automatic Program and Erase - Page Program: (2K + 64) Byte - Block Erase: (128K + 4K) Byte
 Page Read Operation - Page Size: (2K + 64) Byte - Random Read: 25us (Max.) - Serial Access: 25ns (Min.) (3.3V)
 Memory Cell: 1bit/Memory Cell
 Fast Write Cycle Time - Program time: 300us - typical - Block Erase time: 4ms - typical
 Command/Address/Data Multiplexed I/O Port
 Hardware Data Protection - Program/Erase Lockout During Power Transitions F59L1G81MB (2M) 1 Gbit (128.