60T03J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

60T03J N-CHANNEL ENHANCEMENT MODE POWER MOSFET

D G S BV DSS R DS(ON) ID 30V 12mΩ 45A The SSM60T03H is in a TO-252 package, which is widely used for commercial and industrial surface mount applications, and is well suited for low voltage applications such as DC/DC converters. The through-hole version, the SSM60T03J in TO-251, is available for.

Features

ating Factor Single Pulse Avalanche Energy3 Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-c Thermal Resistance Junction-case Rthj-a Thermal Resistance Junction-ambient Rating 30 ±20 45 32 120 44 0.352 29 -55 to 175 -55 to 175 Units V V A A A W W/°C mJ °C °C Max. 3.4 110 Units °C/W °C/W 8/16/2004 Rev.2.1 www.SiliconStandard.com 1 of 5 SSM60T03H,J Electrical Characteristics @ Tj=25oC (unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS ∆ BV ∆ DSS/ Tj RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Q.