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IMBG65R050M2H Datasheet

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IMBG65R050M2H File Size : 1.61MB

IMBG65R050M2H MOSFET

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Features


•Ultra-lowswitchinglosses
•Benchmarkgatethresholdvoltage,VGS(th)=4.5V
•Robustagainstparasiticturn-onevenwith0Vturn-offgatevoltage
•Flexibledrivingvoltageandcompatiblewithbipolardrivingscheme
•Robustbodydiodeoperationunderhardcommutationevents
•.XTinterconnectiontechnologyforbest-in-classthermalperformance Benefits
•Enableshighefficiencyandhighpowerdensitydesigns
•Facilitatesgreateaseofuseandintegration
•ProvidesthebestpriceperformanceratiocomparedtoIndustry’smost ambitiousroadmaps
•Reducesthesize,weightandbillofmat.

IMBG65R050M2H IMBG65R050M2H IMBG65R050M2H

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