IPP018N10N5 MOSFET

IPP018N10N5 MOSFET

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Features

•Idealforhighfrequencyswitchingandsync.rec.
•N-channel,normallevel
•OptimizedforFOMOSS
•Verylowon-resistanceRDS(on)
•175°Coperatingtemperature
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 1.83 mΩ ID 205 A Qoss 213 nC QG 168 nC TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP018N10N5 Package PG-TO220-3 Marking 018N10N5 Re.