1ED3140MU12F Single-channel 3kV (rms) isolated gate driver

1ED3140MU12F Single-channel 3kV (rms) isolated gate driver

The 1ED314xMU12F gate driver ICs are galvanically isolated single channel gate driver ICs for IGBT, MOSFET and SiC MOSFET in DSO-8 150 mil package. They provide a typical output current of up to 6.5 A. The input logic pins operate on a wide input voltage range from 3 V to 6.5 V using CMOS threshold .

Features

• Single-channel isolated gate driver
• For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs
• Up to 6.5 A typical peak output current
• 45 ns propagation delay with 7 ns part-to-part matching (skew)
• 35 V absolute maximum output supply voltage
• High common-mode transient immunity CMTI > 300 kV/µs
• Separate source and sink outputs with active shutdown and short circuit clamping
• Galvanically isolated coreless transformer gate driver
• 3.3 V and 5 V input supply voltage
• Suitable for operation at high ambient temperature and in fast switching applications
• UL 1577 certi.