C2570A NPN EPITAXIAL SILICON RF TRANSISTOR

C2570A NPN EPITAXIAL SILICON RF TRANSISTOR

The 2SC2570A is designed for use in Low Noise Amplifier of VHF and UHF satges. FEATURES • Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz • Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION .

Features

• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @ VCE = 10 V, IC = 5 mA, f = 1 GHz
• Wide dynamic range : NF = 1.9 dB TYP., Ga = 9 dB TYP. @ VCE = 10 V, IC = 15 mA, f = 1 GHz ORDERING INFORMATION Part Number 2SC2570A 2SC2570A-T Quantity 500 pcs (Non reel) 2.5 kpcs/box (Box type) Supplying Form
• 18 mm wide radial taping
• Supplying paper tape with in a box Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 500 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 25 V Co.