2SK2978 Silicon N-Channel MOSFET

2SK2978 Silicon N-Channel MOSFET

2SK2978 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A) • Low drive current • High speed switching • 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code.

Features

• Low on-resistance RDS(on) = 0.09 Ω typ. (VGS = 4 V, ID = 1.5 A)
• Low drive current
• High speed switching
• 2.5 V gate drive devices. REJ03G1060-0500 (Previous: ADE-208-659C) Rev.5.00 Sep.07,2005 Outline RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R ) 21 3 4 D 1. Gate 2. Drain G 3. Source 4. Drain Note: Marking is “ZY” S *UPAK is a trademark of Renesas Technology Corp. Rev.5.00 Sep. 07, 2005 page 1 of 6 2SK2978 Absolute Maximum Ratings Item Symbol Drain to source voltage VDSS Gate to source voltage VGSS Drain current Drain peak current ID ID(pulse)Note1 Bo.