AOM040V120X2Q Silicon Carbide Power MOSFET

AOM040V120X2Q Silicon Carbide Power MOSFET

AOM040V120X2Q 1200 V αSiC Silicon Carbide Power MOSFET Features • Proprietary αSiC MOSFET technology • Low loss, with low RDS, ON • Fast switching with low RG and low capacitance • Flexible gate voltage range (VGS = 15 to 18 V) • Low reverse recovery diode (Qrr) • AEC-Q101 Automotive Qualified Appl.

Features

• Proprietary αSiC MOSFET technology
• Low loss, with low RDS, ON
• Fast switching with low RG and low capacitance
• Flexible gate voltage range (VGS = 15 to 18 V)
• Low reverse recovery diode (Qrr)
• AEC-Q101 Automotive Qualified Applications
• xEV Charger
• Electric Vehicle Supply Equipment (EVSE)
• Motor Drives
• Automotive Inverters Pin Configuration Top View Product Summary VDS @ TJ, max IDM RDS(ON), typ Qrr EOSS @ 800 V 100% UIS Tested 1200 V 100 A 40 mΩ 143 nC 44 µJ D Bottom View (1) (1) (2)(3)(4) Ordering Part Number AOM040V120X2Q Package Type TO-247-4L Form Tube Absolute Max.