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BF998 |
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| Part Number | BF998 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz • Pb-free (RoHS compliant) package BF998... ESD (E... |
| Features |
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage ID = 10 µA, VG1S = -4 V, VG2S = -4 V Gate 1 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate2 source breakdown voltage ±IG2S = 10 mA, VG2S = VDS = 0 Gate 1 source leakage current ±VG1S = 5 V, VG2S = VDS = 0 Gate 2 source leakage current ±VG2S = 5 V, VG2S = VDS = 0 Drain current VDS = 8 V, VG1S = 0 , VG2S = 4 V Gate 1 source pinch-off voltage VDS = 8 V, VG2S = 4 V, ID = 20 µA Gate 2 source pinch-off voltage VDS = 8 V, VG1S = 0 , ID = 20 µA
V(BR)DS
12
-
-V
±V(BR)G1SS 8
-
12
±V(BR)G2SS 8
... |
| Document |
 BF998 Data Sheet
PDF 669.78KB |
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