C4D08120A 8A Silicon Carbide Schottky Diode

C4D08120A 8A Silicon Carbide Schottky Diode

With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to meet various applica.

Features

• Low Forward Voltage (VF) Drop with Positive Temperature Coefficient
• Zero Reverse Recovery Current / Forward Recovery Voltage
• Temperature-Independent Switching Behavior Applications
• Industrial Switched Mode Power Supplies
• Uninterruptible & AUX Power Supplies
• Boost for PFC & DC-DC Stages
• Solar Inverters Maximum Ratings (TC = 25°C Unless Otherwise Specified) Parameter Repetitive Peak Reverse Voltage DC Blocking Voltage Continuous Forward Current Repetitive Peak Forward Surge Current Non-Repetitive Forward Surge Current Non-Repetitive Peak Forward Surge Current Power Dissipation i.