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C3M0120090J Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode TAB Drain Features • New C3M SiC MOSFET technology • High blocking voltage with low On-resistance • High speed switching with low capacitances • New low impedance package with driver source • Fast intrinsic.
• New C3M SiC MOSFET technology
• High blocking voltage with low On-resistance
• High speed switching with low capacitances
• New low impedance package with driver source
• Fast intrinsic diode with low reverse recovery (Qrr)
• Halogen free, RoHS compliant
• Wide creepage (~7mm) between drain and source
Drain (TAB)
1 2 34 5 6 7 G KS S S S S S
Gate (Pin 1)
Driver Source (Pin 2)
Power Source (Pin 3,4,5,6,7)
Part Number C3M0120090J
Package TO-263-7
Wolfspeed, Inc. is in the process of rebranding its products and related materials pursuant to the entity name change from Cree, Inc. to Wolfsp.
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Cree |
Silicon Carbide Power MOSFET |
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Cree |
Silicon Carbide Power MOSFET |
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Cree |
Silicon Carbide Power MOSFET |
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Cree |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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CREE |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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CREE |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Wolfspeed |
N-Channel Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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Wolfspeed |
Silicon Carbide Power MOSFET |
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CREE |
Silicon Carbide Power MOSFET |
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