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The UTC 50NM80-Q is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at AC-DC converters for power applications. FEA.
* RDS(ON) ≤ 100 mΩ @ VGS=10V, ID=25A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
50NM80L-T47-T
50NM80G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-247
Pin Assignment
1
2
3
G
D
S
Packing Tube
MARKING
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QW-R205-957.b
50NM80-Q
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATIN.
| Distributor | Stock | Price | Buy |
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|---|---|---|---|---|
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UTC |
N-CHANNEL MOSFET |
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Vishay Siliconix |
SUB50N02-09 |
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SUD50N024 |
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Vishay Intertechnology |
SU50N02409PU54A |
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Vishay Siliconix |
SUD50N025-05P |
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Tuofeng |
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KIA |
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GFO |
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Bay Linear |
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NXP Semiconductors |
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Vishay |
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CHONGQING PINGYANG |
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ETC |
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Inchange Semiconductor |
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UTC |
N-CHANNEL POWER MOSFET |
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