SCT025W120G3AG Automotive-grade silicon carbide Power MOSFET

SCT025W120G3AG Automotive-grade silicon carbide Power MOSFET

S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, whic.

Features

Order code SCT025W120G3AG VDS 1200 V RDS(on) typ. 27 mΩ ID 56 A HiP247 3 2 1 D(2, TAB)
• AEC-Q101 qualified
• Very low RDS(on) over the entire temperature range
• High speed switching performances
• Very fast and robust intrinsic body diode
• Very high operating junction temperature capability (TJ = 200 °C) Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV G(1)
• On board charger (OBC) Description S(3) AM01475v1_noZen This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technolog.