PBSS5240T Datasheet

PBSS5240T 2A PNP low VCEsat transistor

PNP low VCEsat transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4240T 2. Features and benefits • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation 3. Applications •.

Features

• Low collector-emitter saturation voltage
• High current capability
• Improved device reliability due to reduced heat generation 3. Applications
• Supply line switching circuits
• Battery management applications
• DC/DC converter applications
• Strobe flash units
• Heavy duty battery powered equipment (motor and lamp drivers) 4. Quick reference data Table 1. Quick reference data Symbol Parameter VCEO collector-emitter voltage IC ICM RCEsat collector current peak collector current collector-emitter saturation resistance Conditions open base single pulse; tp ≤ 1 ms IC = -500 mA; IB = .