IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV6416DBLL 64K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

The ISSI IS61WV6416DAxx/DBxx and IS64WV6416DBxx are high-speed, 1,048,576-bit static RAMs organized as 65,536 words by 16 bits. It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and .

Features

HIGH SPEED: (IS61/64WV6416DALL/DBLL)
• High-speed access time: 8, 10, 12, 20 ns
• Low Active Power: 135 mW (typical)
• Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV6416DALS/DBLS)
• High-speed access time: 25, 35 ns
• Low Active Power: 55 mW (typical)
• Low Standby Power: 12 µW (typical) CMOS standby
• Single power supply — Vdd 1.65V to 2.2V (IS61WV6416DAxx) — Vdd 2.4V to 3.6V (IS61/64WV6416DBxx)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial and Automotive temperature support
• Lead-free.