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The IS66/67WVS16M8FALL/BLL are integrated memory device containing 128Mb Pseudo Static Random Access Memory using a self-refresh DRAM array organized as 16M words by 8 bits. The device is a dual die stack of two 64Mb die. The device supports SPI (Serial Peripheral Interface) & QPI (Quad Peripheral .
• Industry Standard Serial Interface - SPI Protocol: 1-1-1 & 1-4-4 operation - QPI protocol: 4-4-4 operation - Low Signal Counts :6 Signal pins (CE#, CLK, SIO0~SIO3) - Dual stack die of two 64Mb
• High Performance - Clock Rate: 33MHz(max) for normal read 104MHz(max) for fast read - Page Size: 1024 Byte - Configurable Wrapped Burst Length: 32 and 1024 (Default=1024) - Always Wrapped Burst Operation within page. - Die Boundary Crossing is not allowed during Wrapped Burst operation. - Drive Strength: 50ohm
• Low Power Consumption - Single 1.65V to 1.95V Voltage Supply - Single 2.7V to 3.6V Voltag.
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ISSI |
128Mb SerialRAM |
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ISSI |
8Mb Serial RAM |
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ISSI |
8Mb Serial RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM |
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ISSI |
16Mb Async/Page/Burst CellularRAM |
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ISSI |
32Mb Async/Page/Burst CellularRAM |
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