IS61WV25616EDALL |
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Part Number | IS61WV25616EDALL |
Manufacturer | ISSI |
Description | The ISSI IS61WV25616EDALL are high-speed, low power, 4M bit static RAMs organized as 256K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology and implemented ECC function ... |
Features |
High-speed access time: 20ns Single power supply – 1.65V-2.2V VDD Low Standby Current:1.5mA (typical) Fully static operation: no clock or refresh required Data control Three state outputs Industrial and Automotive temperature support Lead-free available Error Detection and Correction FUNCTIONAL BLOCK DIAGRAM A0 – A17 VDD VSS I/O0 – I/O7 I/O8 – I/O15 DECODER Memory Memory Lower IO ECC Upper IO ECC Array Array Array Array 256Kx8 256Kx4 256Kx8 256Kx4 8 4 8 4 I/O DATA CIRCUIT 8 12 8 ECC ECC 12 COLUMN I/OColumn I/O CS# OE# WE# UB# LB# CONTROL CIRCUIT DESCRIPTI... |
Document |
IS61WV25616EDALL Data Sheet
PDF 895.68KB |
Distributor | Stock | Price | Buy |
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No. | Part # | Manufacture | Description | Datasheet |
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ISSI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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ISSI |
256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM |
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