IS43TR16256EC |
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| Part Number | IS43TR16256EC |
| Manufacturer | ISSI |
| Description | IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): ... |
| Features |
• Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • 8 internal banks for concurrent operation • 8n-Bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms)... |
| Datasheet |
 IS43TR16256EC Data Sheet
PDF 4.57MB |
| Distributor | Stock | Price | Buy |
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| No. | Part # | Manufacture | Description | Datasheet |
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ISSI |
4Gb DDR3 SDRAM |
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ISSI |
4Gb DDR3 SDRAM |
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ISSI |
4Gb DDR3 SDRAM |
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ISSI |
4Gb DDR3 SDRAM |
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ISSI |
4Gb DDR3 SDRAM |
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ISSI |
2Gb DDR3 SDRAM |
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ISSI |
2Gb DDR3 SDRAM |
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ISSI |
2Gb DDR3 SDRAM |
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ISSI |
2Gb DDR3 SDRAM |
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ISSI |
512M x 16 8Gb DDR3 SDRAM |
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