...................................................................................................................................................................................4 2. HyperRAM Product Overview............................................................................................
mmary
Read Transaction Timings
Maximum Clock Rate at 1.8V 200 MHz
VCC/VCCQ
Maximum Clock Rate at 3.0V 200 MHz
VCC/VCCQ
Maximum Access Time
35 ns
High Performance
◼ 200Mhz maximum clock rate
◼ Double-Data Rate (DDR) - two data transfers per clock
◼ Data throughput up to 400 MB/s (3,200 Mbps) o Configurable Burst Characteristics Wrapped burst lengths: - 16 bytes (8 clocks) - 32 bytes (16 clocks) - 64 bytes (32 clocks) - 128 bytes (64 clocks) o Linear burst o Hybrid burst - one wrapped burst followed by linear burst
◼ Power Modes o Hybrid Sleep Mode o Deep Power Down
◼ Array Refresh o Par.
Distributor | Stock | Price | Buy |
---|
No. | Part # | Manufacture | Description | Datasheet |
---|---|---|---|---|
1 | IS67WVH8M8FALL |
ISSI |
64Mb HyperRAM | |
2 | IS67WVH8M8ALL |
ISSI |
8M x 8 HyperRAM | |
3 | IS67WVH8M8BLL |
ISSI |
8M x 8 HyperRAM | |
4 | IS67WVH8M8DALL |
ISSI |
8M x 8 HyperRAM | |
5 | IS67WVH8M8DbLL |
ISSI |
8M x 8 HyperRAM | |
6 | IS67WVH8M8EDALL |
ISSI |
8M x 8 HyperRAM | |
7 | IS67WVH8M8EDBLL |
ISSI |
8M x 8 HyperRAM | |
8 | IS67WVH16M8ALL |
ISSI |
16M x 8 HyperRAM | |
9 | IS67WVH16M8BLL |
ISSI |
16M x 8 HyperRAM | |
10 | IS67WV1M16EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
11 | IS67WV51216DBLL |
Integrated Silicon Solution |
8Mb LOW VOLTAGE ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
12 | IS67WV51216EBLL |
ISSI |
ULTRA LOW POWER PSEUDO CMOS STATIC RAM | |
13 | IS67WVC1M16ALL |
ISSI |
16Mb Async/Page/Burst CellularRAM | |
14 | IS67WVC2M16EALL |
ISSI |
32Mb Async/Page/Burst CellularRAM | |
15 | IS67WVC2M16ECLL |
ISSI |
32Mb Async/Page/Burst CellularRAM |