MSC2X100SDA120J Dual Silicon Carbide Schottky Barrier Diode

MSC2X100SDA120J Dual Silicon Carbide Schottky Barrier Diode

MSC2X101/100SDA120J Dual Silicon Carbide Schottky Barrier Diode Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. M.

Features

The following are key features of the MSC2X101SDA120J and MSC2X100SDA120J devices:
• No reverse recovery
• Low forward voltage
• Low leakage current
• Avalanche-energy rated
• RoHS compliant
• Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X101SDA120J and MSC2X100SDA120J devices:
• High switching frequency
• Low switching losses
• Low noise (EMI) switching
• Higher reliability systems
• Increased system power density
• Direct mounting to the heat sink (isolated package) 053-4109 MSC2X101/100SDA120J Datasheet Revision A 1 Product Overview Applications The MSC2X101S.