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MSC2X100SDA070J |
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| Part Number | MSC2X100SDA070J |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Description | MSC2X101/100SDA070J Dual Silicon Carbide Schottky Barrier Diodes Product Overview The Silicon Carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance ove... |
| Features |
The following are key features of the MSC2X101SDA070J and MSC2X100SDA070J devices: • No reverse recovery • Low forward voltage • Low leakage current • Avalanche-energy rated • RoHS compliant • Isolated voltage to 2500 V Benefits The following are benefits of the MSC2X101SDA070J and MSC2X100SDA070J devices: • High switching frequency • Low switching losses • Low noise (EMI) switching • Higher reliability systems • Increased system power density • Direct mounting to the heat sink (isolated package) 053-4108 MSC2X101/100SDA070J Datasheet Revision A 1 Product Overview Applications The MSC2X101S... |
| Document |
 MSC2X100SDA070J Data Sheet
PDF 922.26KB |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diode |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diode |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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Microsemi |
Dual Silicon Carbide Schottky Barrier Diodes |
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