MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode

MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode

MSC020SDA120B Zero Recovery Silicon Carbide Schottky Diode Product Overview The silicon carbide (SiC) power Schottky barrier diode (SBD) product line from Microsemi increases the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC020.

Features

The following are key features of the MSC020SDA120B device:
• No reverse recovery
• Low forward voltage
• Low leakage current
• Avalanche-energy rated
• RoHS compliant Benefits The following are benefits of the MSC020SDA120B device:
• High switching frequency
• Low switching losses
• Low noise (EMI) switching
• Higher reliability systems
• Increased system power density Applications The MSC020SDA120B device is designed for the following applications:
• Power factor correction (PFC)
• Anti-parallel diode ◦ Switch-mode power supply ◦ Inverters/converters ◦ Motor controllers
• Freewheeling diode .