The GC4500 series are high voltage, high power (anode base) NIP diodes. These high resistivity silicon devices are passivated with silicon dioxide for high stability and reliability and have been proven by thousands of device hours in high reliability systems. These devices can withstand storage tem.
Available as packaged devices or as chips for hybrid applications
High power handling
Suitable for applications to 18Ghz
Low Loss
Low Distortion
RoHS Compliant1
1 Products are supplied with a Gold finish and are suitable for RoHS complaint assembly. Consult factory for details.
APPLICATIONS/BENEFITS
TR Switches
Antenna Selector Switches
Duplexers
Digital Phase Shifters
GC4510-GC4533
Copyright 2006 Rev.: 2008-12-08
Microsemi
Microwave Products 75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 1
www.MICROSEMI.com
GC4510
– GC4533
CONTROL DEV.
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