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MG1009 |
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| Part Number | MG1009 |
| Manufacturer | Microsemi (https://www.microsemi.com/) |
| Description | Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using p... |
| Features |
● CW Designs to 500 mW ● Pulsed Designs to 10 W ● Frequency Coverage Specified from 5.9 –95 GHz ● Low Phase Noise ● High Reliability Applications ● Motion Detectors ● Transmitters and Receivers ● Beacons ● Automotive Collision Avoidance Radars ● Radars ● Radiometers ● Instrumentation Description Microsemi’s GaAs Gunn diodes, epi-down (cathode heatsink), are fabricated from epitaxial layers grown at MSC using the chemical vapor deposition (CVD) epitaxy process. The layers are processed using proprietary techniques resulting in low phase and 1/f noise. Our Gunn diodes are available in a variety ... |
| Document |
 MG1009 Data Sheet
PDF 205.73KB |
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| No. | Part # | Manufacture | Description | Datasheet |
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HITANO |
Metal Glaze Resistors |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Microsemi |
GUNN Diodes |
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Toshiba |
Transistor |
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