CY15V108QN LP Ferroelectric RAM

CY15V108QN LP Ferroelectric RAM

Functional description The EXCELON™ LP CY15X108QN is a low power, 8-Mb non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years whi.

Features

• 8-Mb ferroelectric random access memory (F-RAM) logically organized as 1024K × 8 - Virtually unlimited endurance 1000 trillion (1015) read/writes - 151-year data retention (See “Data retention and endurance” on page 26) - Infineon instant non-volatile write technology - Advanced high-reliability ferroelectric process
• Fast serial peripheral interface (SPI) - Up to 40 MHz frequency - Supports SPI mode 0 (0, 0) and mode 3 (1, 1)
• Sophisticated write protection scheme - Hardware protection using the Write Protect (WP) pin - Software protection using Write Disable (WRDI) instruction - Software.